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2SA1020
One Watt High Current PNP Transistor
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C
VCE
50
Vdc
VCB
50
Vdc
VEB
5.0
Vdc
IC
2.0
Adc
PD
900
mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
°C
Range
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
2SA1020 Datasheet
