2SD1062 Datasheet, Transistors, ON Semiconductor

✔ 2SD1062 Features

Low-saturation collector-to-emitter voltage : VCE(sat)=
0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown. Specifications ( ) : 2SB826 Abso

Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching ap

ON Semiconductor manufacturer logo

2SD1062

92.38 KB

Pnp / npn epitaxial planar silicon transistors.

📁 Related Datasheet

2SD1060 - NPN Transistor (INCHANGE)

2SD1060 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SD1060 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR (UTC)

2SD1060 - SILICON POWER TRANSISTOR (SavantIC)

2SD1060 - Bipolar Transistor (ON Semiconductor)

2SD1061 - NPN Transistor (INCHANGE)

2SD1061 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SD1061 - SILICON POWER TRANSISTOR (SavantIC)

Stock and price

onsemi

Trans GP BJT NPN 50V 12A 1750mW 3-Pin(3+Tab) TO-220

2SD1062R

16403 In Stock

Qty : 339 units

Unit Price : $1.11

TAGS