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3SK264 - N-Channnel Dual Gate MOSFET

Datasheet Summary

Features

  • Enhancement type.
  • Easy AGC (Cut off at VG2S=0V).
  • Small noise figure.
  • Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stres.

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Datasheet Details

Part number 3SK264
Manufacturer ON Semiconductor
File Size 460.17 KB
Description N-Channnel Dual Gate MOSFET
Datasheet download datasheet 3SK264 Datasheet
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Full PDF Text Transcription

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Ordering number : EN4901B 3SK264 N-Channnel Dual Gate MOSFET 15V,30mA,PG=23dB,NF=1.1dB, CP4 http://onsemi.com Features • Enhancement type • Easy AGC (Cut off at VG2S=0V) • Small noise figure • Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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