3SK264 - N-Channnel Dual Gate MOSFET

ON Semiconductor

Datasheet Details

Enhancement type.
Easy AGC (Cut off at VG2S=0V).
Small noise figure.
Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD Tch Tstg Conditions Ratings 15 ±8 ±8 30 200 125 --55 to +125 Unit V V V mA mW °C °C Stres.

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Published: Aug 15, 2018 |