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FDD2670 N-Channel MOSFET

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Description

FDD2670 FDD2670 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional s.

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Features

* 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
* Low gate charge
* Fas t switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted

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