FDD2670

N-Channel MOSFET

ON Semiconductor

* 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V

* Low gate charge

* Fas t switching speed

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability D G S Absolute Maximum Ratings TA=25oC unless otherwise noted

FDD2670

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N-channel mosfet.

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FDD2670 N-Channel MOSFET ON Semiconductor

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