FDMC0310AS - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMC0310AS
Manufacturer	ON Semiconductor
File Size	455.92 KB
Description	N-Channel MOSFET
Datasheet	FDMC0310AS-ONSemiconductor.pdf

FDMC0310AS Product details

Description

The FDMC0310AS has been designed to minimize losses in power conversion application.Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.

Features

Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A.
Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A.
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
SyncFET Schottky Body Diode.
MSL1 Robust Package Design.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Apr 30, 2021 |