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FDMC2674 N-Channel MOSFET

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Description

MOSFET * N-Channel, UltraFET Trench 220 V, 7.0 A, 366 mW FDMC2674 General .
UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications.

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Features

* Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A
* Typ Qg = 12.7 nC at VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* Optimized Efficiency at High Frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* Pb
* Free, Halide

FDMC2674 Distributors

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMC2674-like datasheet