FDMC3612 Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A

* Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A

* Low Profile

* 1 mm Max in Power 33

* 100% UIL Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

* DC

* DC Co

FDMC3612

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N-channel mosfet.

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FDMC3612 N-Channel MOSFET ON Semiconductor

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