FDMC510P - P-Channel MOSFET

ON Semiconductor

FDMC510P Datasheet Preview — Preview of FDMC510P PDF

Datasheet Details

Part number	FDMC510P
Manufacturer	ON Semiconductor ↗
File Size	196.93 KB
Description	P-Channel MOSFET
Datasheet	FDMC510P-ONSemiconductor.pdf

FDMC510P Product details

Description

This P Channel MOSFET is produce using onsemi’s advanced POWERTRENCH® process that has been optimized for rDS(ON), switching performance and ruggedness.

Features

Max rDS(on) = 8.0 mW at VGS =.
4.5 V, ID =.
12 A.
Max rDS(on) = 9.8 mW at VGS =.
2.5 V, ID =.
10 A.
Max rDS(on) = 13 mW at VGS =.
1.8 V, ID =.
9.3 A.
Max rDS(on) = 17 mW at VGS =.
1.5 V, ID =.
8.3 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
100% UIL Tested.
H.

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Published: Dec 19, 2023 |