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FDMC5614P - P-Channel PowerTrench MOSFET

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Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A Low gate charge Fast switching speed This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process.It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). High performance trench technology for extremely low rDS(on) High power and cur

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