FDMC5614P P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMC5614P P-Channel PowerTrench® MOSFET FDMC5614P P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ May 2014 .
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5. Max rDS(on) = 135mΩ at VGS = -4. Low gate charge.

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Datasheet Specifications

Part number: FDMC5614P
Manufacturer: Fairchild Semiconductor
File Size: 531.32 KB
Datasheet: FDMC5614P_FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Applications

* requiring a wide range of gate drive voltage ratings (4.5V-20V).
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* RoHS Compliant Application
* Power management
* Load switch
* Battery prote

FDMC5614P Distributors

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FDMC5614P P-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC5614P-like datasheet