FDMC5614P Datasheet, Mosfet, Fairchild Semiconductor

✔ FDMC5614P Features

General Description
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
Low gate charge
Fast switching speed This P-Ch

✔ FDMC5614P Application

requiring a wide range of gate drive voltage ratings (4.5V-20V).
High performance trench technology for e

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FDMC5614P

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Fairchild Semiconductor

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📄 Datasheet

Description:

P-channel powertrench mosfet. * Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A * Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A * Low gate charge * Fast switching

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MOSFET P-CH 60V 5.7A/13.5A 8MLP

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FDMC5614P

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FDMC5614P P-Channel PowerTrench MOSFET Fairchild Semiconductor