FDMC5614P - P-Channel MOSFET

ON Semiconductor

FDMC5614P Datasheet Preview — Preview of FDMC5614P PDF

Datasheet Details

Part number	FDMC5614P
Manufacturer	ON Semiconductor ↗
File Size	183.63 KB
Description	P-Channel MOSFET
Datasheet	FDMC5614P-ONSemiconductor.pdf

FDMC5614P Product details

Description

This P Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process.It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V 20 V).

Features

Max rDS(on) = 100 mW at VGS =.
10 V, ID =.
5.7 A.
Max rDS(on) = 135 mW at VGS =.
4.5 V, ID =.
4.4 A.
Low Gate Charge.
Fast Switching Speed.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 19, 2023 |