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FDMC8010

N-Channel MOSFET

FDMC8010 Features

* Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A

* Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A

* High Performance Technology for Extremely Low RDS(on)

* These Devices are Pb

* Free and are RoHS Compliant Applications

* DC

* DC Buck Converters

FDMC8010 General Description

This N

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and O.

FDMC8010 Datasheet (544.42 KB)

Preview of FDMC8010 PDF

Datasheet Details

Part number:

FDMC8010

Manufacturer:

ON Semiconductor ↗

File Size:

544.42 KB

Description:

N-channel mosfet.

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FDMC8010 N-Channel MOSFET ON Semiconductor

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