FDMC8010ET30 - N-Channel MOSFET
This N *Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance.
This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM,
FDMC8010ET30 Features
* Extended TJ Rating to 175°C
* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A
* High Performance Technology for Extremely Low rDS(on)
* These Devices are Pb
* Free and are RoHS Compliant Applications
