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FDMC8010ET30 Datasheet - ON Semiconductor

FDMC8010ET30 - N-Channel MOSFET

This N *Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance.

This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM,

FDMC8010ET30 Features

* Extended TJ Rating to 175°C

* Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A

* Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A

* High Performance Technology for Extremely Low rDS(on)

* These Devices are Pb

* Free and are RoHS Compliant Applications

FDMC8010ET30-ONSemiconductor.pdf

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Datasheet Details

Part number:

FDMC8010ET30

Manufacturer:

ON Semiconductor ↗

File Size:

573.82 KB

Description:

N-channel mosfet.

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