FDMC8010ET30 - N-Channel MOSFET

ON Semiconductor

FDMC8010ET30 Datasheet Preview — Preview of FDMC8010ET30 PDF

Datasheet Details

Part number	FDMC8010ET30
Manufacturer	ON Semiconductor ↗
File Size	573.82 KB
Description	N-Channel MOSFET
Datasheet	FDMC8010ET30-ONSemiconductor.pdf

FDMC8010ET30 Product details

Description

This N Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance.

Features

Extended TJ Rating to 175°C.
Max rDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A.
Max rDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A.
High Performance Technology for Extremely Low rDS(on).
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 19, 2023 |