FDPC5018SG Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDPC5018SG Features

* Q1: N-Channel

* Max RDS(on) = 5.0 mW at VGS = 10 V, ID = 17 A

* Max RDS(on) = 6.5 mW at VGS = 4.5 V, ID = 14 A Q2: N-Channel

* Max RDS(on) = 1.6 mW at VGS = 10 V, ID = 32 A

* Max RDS(on) = 2.0 mW at VGS = 4.5 V, ID = 28 A

* Low Inductance Packaging Shortens Ri

FDPC5018SG General Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETt (Q2) have been designed to provide optimal power efficiency. F.

FDPC5018SG Datasheet (509.67 KB)