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FFSB20120A-F085 Silicon Carbide Schottky Diode

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Description

FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 200 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters www. onsemi. com 1.,3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK
* 3(TO
* 263, 3
* LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 20120A $Y = ON Semiconductor Logo &Z

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FFSB20120A-F085 Silicon Carbide Schottky Diode ON Semiconductor
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