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FFSB2065B-F085 Silicon Carbide Schottky Diode

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Description

FFSB2065B-F085 Silicon Carbide Schottky Diode 650 V, 20 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 94 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable
* Th

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM EAS IF Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) Continuou

FFSB2065B-F085 Distributors

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