M1MA174T1 - Silicon Switching Diode
M1MA174T1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD Value 100 200 500 200 Unit V mA mA mW 3 CATHODE 1 ANODE http://onsemi.com 1.6 mW/°C 3 TJ, Tstg 55 to +150 °C
M1MA174T1 Features
* rameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
