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MTBV30P06V, MTB30P06V Datasheet - ON Semiconductor

MTB30P06V-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: MTBV30P06V, MTB30P06V. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MTBV30P06V, MTB30P06V

Manufacturer:

ON Semiconductor ↗

File Size:

159.52 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: MTBV30P06V, MTB30P06V.
Please refer to the document for exact specifications by model.

MTBV30P06V, MTB30P06V, Power MOSFET

MTB30P06V, MTBV30P06V Power MOSFET 30 Amps, 60 Volts P Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Featur

MTBV30P06V Features

* Avalanche Energy Specified

* IDSS and VDS(on) Specified at Elevated Temperature

* AEC

* Q101 Qualified and PPAP Capable

* MTBV30P06V

* These Devices are Pb

* Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating

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