MTD3055V Datasheet - ON Semiconductor

MTD3055V Power MOSFET

MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD3055V Features

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* SOURCE DIODE CHARACTERISTICS 12 10 I S , SOURCE CURRENT (AMPS) 8 6 4 2 0 0.5 VGS = 0 V TJ = 25°C 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe

MTD3055V_ONSemiconductor.pdf