Datasheet4U Logo Datasheet4U.com

MTD3055V Power MOSFET

MTD3055V Description

MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N *Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanc.

MTD3055V Features

* TO
* SOURCE DIODE CHARACTERISTICS 12 10 I S , SOURCE CURRENT (AMPS) 8 6 4 2 0 0.5 VGS = 0 V TJ = 25°C 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA The Forward Biased Safe

MTD3055V Applications

* in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

📥 Download Datasheet

Preview of MTD3055V PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MTD3055E - TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK (Motorola)
  • MTD3055EL - TMOS IV Power Field Effect Transistor (Motorola)
  • MTD300A20Q8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTD300N20J3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTD3010PM - Photo Diode (Marktech Corporate)
  • MTD3125-8 - (MT Series) DC/DC Converters (Astec Standard Power)
  • MTD3125-9 - (MT Series) DC/DC Converters (Astec Standard Power)
  • MTD3302 - SINGLE TMOS POWER MOSFET 30 VOLTS RDS (Motorola)

📌 All Tags

Power MOSFET ON Semiconductor
ON Semiconductor MTD3055V-like datasheet