MTDF1C02HD Datasheet - ON Semiconductor

MTDF1C02HD Power MOSFET

MTDF1C02HD Preferred Device Power MOSFET 1 Amp, 20 Volts Complementary Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain to source diode has a very low reverse recovery time. Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc dc converters, and power management in portable and battery powered prod.

MTDF1C02HD Features

* 1.9 V 2.3 V 2.1 V 2.0 1.7 V 1.0 1.5 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 1. On

* Region Characteristics ID, DRAIN CURRENT (AMPS) 4.0 VGS = 8 4.5 V 3.0 3.7 V 3.3 V 2.0 P

* Channel 3.1 V 2.9 V 2.7 V TJ = 25°C 2.5 V 2.3 V 1.0 2.1 V

MTDF1C02HD Datasheet (331.05 KB)