* nsemi.com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTY14N100E 12 420 QT 10 350 VGS 8 280 6 Q1 4 Q2 TJ = 25°C ID = 14 A 210 140 2 70 Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE (nC) Figure 8. G
MTY14N100E Datasheet (205.28 KB)
MTY14N100E
205.28 KB
Power field effect transistor.
MTY14N100E TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is .
📁 Related Datasheet
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