MTY14N100E Datasheet (ON Semiconductor) - Power Field Effect Transistor

MTY14N100E, Power Field Effect Transistor

MTY14N100E TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads.

The avalanche energy capabi

MTY14N100E Features

* nsemi.com 4 VGS, GATE

* TO

* SOURCE VOLTAGE (VOLTS) VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTY14N100E 12 420 QT 10 350 VGS 8 280 6 Q1 4 Q2 TJ = 25°C ID = 14 A 210 140 2 70 Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE (nC) Figure 8. G