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MTY14N100E Power Field Effect Transistor

MTY14N100E Description

MTY14N100E TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This advanced TMOS power FET is .

MTY14N100E Features

* nsemi. com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTY14N100E 12 420 QT 10 350 VGS 8 280 6 Q1 4 Q2 TJ = 25°C ID = 14 A 210 140 2 70 Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE (nC) Figure 8. G

MTY14N100E Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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📁 Related Datasheet

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  • MTY55N20E - TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM (Motorola)

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Power Field Effect Transistor ON Semiconductor
ON Semiconductor MTY14N100E-like datasheet