MTY14N100E Power Field Effect Transistor

ON Semiconductor

Description

MTY14N100E TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This advanced TMOS power FET is .

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Datasheet Specifications

Part number: MTY14N100E
Manufacturer: ON Semiconductor ↗
File Size: 205.28 KB
Datasheet: MTY14N100E-ONSemiconductor.pdf
Description: Power Field Effect Transistor

Features

* nsemi. com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) MTY14N100E 12 420 QT 10 350 VGS 8 280 6 Q1 4 Q2 TJ = 25°C ID = 14 A 210 140 2 70 Q3 0 VDS 0 0 25 50 75 100 125 150 Qg, TOTAL GATE CHARGE (nC) Figure 8. G

Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Spe

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MTY14N100E Power Field Effect Transistor ON Semiconductor

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