NCP58921 Datasheet (ON Semiconductor)

NCP58921, GaN Power Switch

Pin No.

Pin Name Function Pin Description 1 *10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19 *22, SOURCE 23 *26 GaN Power Switch Source Power path connection for the GaN Switch SOURCE 11 VDR Driver clamp regulator decoupling Connect

DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The NCP58921 integrates a high performance, high frequency, driver utilizing state of the art silicon technology and a 650 V, 50 mW Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure.

The powerful combination of the Si driver and power GaN HEMT switch provides superior p

NCP58921 Features

* 650 V 50 mW GaN HEMT with Integrated Driver

* 30 ns Typical Driver Propagation Delay

* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances

* 2.75 mm Creepage Distance for Maximum Reliability

* Driver Capability Adjust Enables EMI Optimization under Hard Sw