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NCP58921 GaN Power Switch

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Description

DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The.
Pin No. 10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19. 22.

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Features

* 650 V 50 mW GaN HEMT with Integrated Driver
* 30 ns Typical Driver Propagation Delay
* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
* 2.75 mm Creepage Distance for Maximum Reliability
* Driver Capability Adjust Enables EMI Optimization under Hard Sw

Applications

* Power Conversion
* High Power Density Power Supplies
* All Double
* ended Topologies: Half
* bridges, Full
* bridge, LLC
* Active Clamp Flyback
* High
* Voltage Synchronous Buck Converter
* High
* Voltage Synchronous Boo

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