* 650 V 50 mW GaN HEMT with Integrated Driver
* 30 ns Typical Driver Propagation Delay
* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
* 2.75 mm Creepage Distance for Maximum Reliability
* Driver Capability Adjust Enables EMI Optimization under Hard Sw
NCP58921 Datasheet (550.44 KB)
NCP58921
550.44 KB
Gan power switch.
DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The.
📁 Related Datasheet
NCP58922 Enhanced Mode GaN Power Switch (ON Semiconductor)
NCP580 CMOS LDO Regulator (ON Semiconductor)
NCP5810 Dual 1 W Output AMOLED Driver Supply (ON Semiconductor)
NCP582 Low Noise 150mA CMOS LDO Regulator (ON Semiconductor)
NCP583 Ultra-Low Iq 150 mA CMOS LDO Regulator (ON Semiconductor)
NCP58300 3.0A VLDO Fast Transient Response Regulator (ON Semiconductor)
NCP584 Tri-Mode 200mA CMOS LDO Regulator (ON Semiconductor)
NCP585 Tri-Mode 300mA CMOS LDO Regulator (ON Semiconductor)
NCP500 150mA CMOS Low Noise Low-Dropout Voltage Regulator (ON)
NCP5005 Compact Backlight LED Boost Driver (ON Semiconductor)
