* 650 V 78 mW GaN HEMT with Integrated Driver
* 30 ns Typical Driver Propagation Delay
* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
* 2.75 mm Creepage Distance for Maximum Reliability
* Driver Turn
* on Process is Adjustable via External Resis
NCP58922 Datasheet (550.50 KB)
NCP58922
550.50 KB
Enhanced mode gan power switch.
Enhanced Mode GaN Power Switch with Integrated Driver
650 V, 78 mW, 18 A, TQFN26
NCP58922
The NCP58922 integrates a high
*performance, high fre.
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