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NTBG060N090SC1 SiC MOSFET

NTBG060N090SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 .

NTBG060N090SC1 Features

* Typ. RDS(on) = 60 mW @ VGS = 15 V
* Typ. RDS(on) = 43 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 88 nC)
* High Speed Switching with Low Capacitance (Coss = 115 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and

NTBG060N090SC1 Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 900 V Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to
* So

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