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NTBG060N090SC1 - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTBG060N090SC1
Manufacturer	ON Semiconductor
File Size	787.40 KB
Description	SiC MOSFET
Datasheet	NTBG060N090SC1-ONSemiconductor.pdf

NTBG060N090SC1 Product details

Features

Typ. RDS(on) = 60 mW @ VGS = 15 V.
Typ. RDS(on) = 43 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 88 nC).
High Speed Switching with Low Capacitance (Coss = 115 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Apr 30, 2021 |