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NTH4L030N120M3S - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTH4L030N120M3S
Manufacturer	ON Semiconductor ↗
File Size	327.89 KB
Description	SiC MOSFET
Datasheet	NTH4L030N120M3S-ONSemiconductor.pdf

NTH4L030N120M3S Product details

Features

Typ. RDS(on) = 29 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 107 nC).
High Speed Switching with Low Capacitance (Coss = 106 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Aug 30, 2024 |