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NTH4L032N065M3S SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO247-4L NTH4L032N065M3S .

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Features

* Typical RDS(ON) = 32 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 55 nC)
* High Speed Switching with Low Capacitance (Coss = 114 pF)
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on seco

Applications

* SMPS, Solar Inverters, UPS, Energy Storage, EV Charging Infrastructure MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current Power Dissipation Continuous Dra

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SiC MOSFET ON Semiconductor
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