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NTH4L032N065M3S - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTH4L032N065M3S
Manufacturer	ON Semiconductor ↗
File Size	450.49 KB
Description	SiC MOSFET
Datasheet	NTH4L032N065M3S-ONSemiconductor.pdf

NTH4L032N065M3S Product details

Features

Typical RDS(ON) = 32 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 55 nC).
High Speed Switching with Low Capacitance (Coss = 114 pF).
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection).

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Published: Sep 1, 2024 |