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NTH4L060N065SC1 SiC MOSFET

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Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 44 mohm, 650 V, M2, TO-247-4L NTH4L060N065SC1 .

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Features

* Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 74 nC)
* Low Capacitance (Coss = 133 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

Applications

* SMPS (Switching Mode Power Supplies)
* Solar Inverters
* UPS (Uninterruptable Power Supplies)
* Energy Storages MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to

NTH4L060N065SC1 Distributors

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