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NTH4L060N065SC1 - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NTH4L060N065SC1
Manufacturer	ON Semiconductor ↗
File Size	338.87 KB
Description	SiC MOSFET
Datasheet	NTH4L060N065SC1-ONSemiconductor.pdf

NTH4L060N065SC1 Product details

Features

Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 74 nC).
Low Capacitance (Coss = 133 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Feb 16, 2023 |