NTH4L060N090SC1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 60 mohm, 900 V, M2, TO-247-4L NTH4L060N090SC1 .

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Datasheet Specifications

Part number: NTH4L060N090SC1
Manufacturer: ON Semiconductor ↗
File Size: 913.67 KB
Datasheet: NTH4L060N090SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V
* Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
* Low Effective Output Capacitance (typ. Coss = 113 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

Applications

* UPS
* DC
* DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to
* Source V

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NTH4L060N090SC1 SiC MOSFET ON Semiconductor

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