Datasheet Details
Part number:
NTH4L067N65S3H
Manufacturer:
File Size:
291.45 KB
Description:
N-channel mosfet.
700 V @ TJ = 150°C, Typ. RDS(on) = 55 mW, Ultra Low Gate Charge (Typ. Qg = 80 nC), Low Effective Output Capacitan...
NTH4L067N65S3H-ONSemiconductor.pdf
Datasheet Details
Part number:
NTH4L067N65S3H
Manufacturer:
File Size:
291.45 KB
Description:
N-channel mosfet.
NTH4L067N65S3H Description
SUPERFET III MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performanceThis advanced technology is tailored to minimize conduction loss, provides
Features
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 55 mW
* Ultra Low Gate Charge (Typ. Qg = 80 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant Applications
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