NTH4L075N065SC1 - SiC MOSFET
NTH4L075N065SC1 Features
* Typ. RDS(on) = 57 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 61 nC)
* Low Output Capacitance (Coss = 107 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption
