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NTH4L080N120SC1 SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 80 mohm, 1200 V, M1, TO-247-4L NTH4L080N120SC1 .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

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Features

* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on second level interconnection) A

Applications

* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger DATA SHEET www. onsemi. com VDSS 1200 V RDS(ON) TYP 80 mW ID MAX 29 A N
* CHANNEL MOSFET D S1: Kelvin Source G S2: Power Source S1 S2 D S2 S1 G TO
* 247
* 4LD CASE 340CJ MARKING DIA

NTH4L080N120SC1 Distributors

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SiC MOSFET ON Semiconductor
ON Semiconductor NTH4L080N120SC1-like datasheet