NTH4L080N120SC1 - SiC MOSFET

ON Semiconductor

NTH4L080N120SC1 Datasheet Preview — Preview of NTH4L080N120SC1 PDF

Datasheet Details

Part number	NTH4L080N120SC1
Manufacturer	ON Semiconductor ↗
File Size	404.34 KB
Description	SiC MOSFET
Datasheet	NTH4L080N120SC1-ONSemiconductor.pdf

NTH4L080N120SC1 Product details

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

1200 V @ TJ = 175°C.
Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
High Speed Switching with Low Capacitance.
100% Avalanche Tested.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection).

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Published: Feb 16, 2023 |