NTH4L160N120SC1 SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L NTH4L160N120SC1 .

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Datasheet Specifications

Part number: NTH4L160N120SC1
Manufacturer: ON Semiconductor ↗
File Size: 350.28 KB
Datasheet: NTH4L160N120SC1-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 160 mW
* Ultra Low Gate Charge (QG(tot) = 34 nC)
* High Speed Switching with Low Capacitance (Coss = 49.5 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (

Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS
* 15/+25 V Recommended Operation Values TC

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NTH4L160N120SC1 SiC MOSFET ON Semiconductor

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