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NTH4L160N120SC1

SiC MOSFET

NTH4L160N120SC1 Features

* Typ. RDS(on) = 160 mW

* Ultra Low Gate Charge (QG(tot) = 34 nC)

* High Speed Switching with Low Capacitance (Coss = 49.5 pF)

* 100% Avalanche Tested

* TJ = 175°C

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (

NTH4L160N120SC1 Datasheet (350.28 KB)

Preview of NTH4L160N120SC1 PDF

Datasheet Details

Part number:

NTH4L160N120SC1

Manufacturer:

ON Semiconductor ↗

File Size:

350.28 KB

Description:

Sic mosfet.

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NTH4L160N120SC1 SiC MOSFET ON Semiconductor

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