NTHC5513 Datasheet, Mosfet, ON Semiconductor

NTHC5513 Features

  • Mosfet
  • Complementary N
  • Channel and P
  • Channel MOSFET
  • Small Size, 40% Smaller than TSOP
  • 6 Package
  • Leadless SMD Package Featuring Complementa

PDF File Details

Part number:

NTHC5513

Manufacturer:

ON Semiconductor ↗

File Size:

147.25kb

Download:

📄 Datasheet

Description:

Power mosfet.

Datasheet Preview: NTHC5513 📥 Download PDF (147.25kb)
Page 2 of NTHC5513 Page 3 of NTHC5513

NTHC5513 Application

  • Applications
  • Load Switch Applications Requiring Level Shift
  • DC
  • DC Conversion Circuits
  • Drive Small Brushless DC

TAGS

NTHC5513
Power
MOSFET
ON Semiconductor

📁 Related Datasheet

NTHCxxx - (NTH Series) Crystal Clock Oscillator (Saronix)
SaRonix Crystal Clock Oscillator Technical Data Frequency Range: Frequency Stability: 0.5 MHz to 106.25 MHz ±20, ±25, ±50 or ±100 ppm over all conditi.

NTH027N65S3F - N-Channel MOSFET (ON Semiconductor)
MOSFET  – Power, N-Channel, SUPERFET III, FRFET 650 V, 75 A, 27.4 mW NTH027N65S3F Description SUPERFET III MOSFET is onsemi’s brand−new high voltage s.

NTH080C3 - Crystal Clock Oscillator (Saronix)
SaRonix Crystal Clock Oscillator Technical Data Frequency Range: Frequency Stability: 0.5 MHz to 106.25 MHz ±20, ±25, ±50 or ±100 ppm over all conditi.

NTH2xxx - (NTH Series) Crystal Clock Oscillator (Saronix)
SaRonix Crystal Clock Oscillator Technical Data Frequency Range: Frequency Stability: 0.5 MHz to 106.25 MHz ±20, ±25, ±50 or ±100 ppm over all conditi.

NTH4302 - HD3e Quad N-Channel (ON Semiconductor)
NTH4302 Product Preview HD3e Quad N−Channel The NTH4302 is the first integrated Quad FET in a single package. It is the integration of 4 planar TMOS .

NTH4L013N120M3S - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S Features • Typ. RDS(on) = 13 mW @ .

NTH4L014N120M3P - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching.

NTH4L015N065SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ .

NTH4L020N090SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 11.

NTH4L020N120SC1 - SiC MOSFET (ON Semiconductor)
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 Features • Typ. RDS(on) = 20 mW •.

Stock and price

onsemi
MOSFET N/P-CH 20V 2.9A CHIPFET
DigiKey
NTHC5513T1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts