NTHL060N090SC1 N-Channel MOSFET

ON Semiconductor

NTHL060N090SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 60 mohm, 900 V, M2, TO-247-3L NTHL060N090SC1 .

NTHL060N090SC1 Features

* Typ. RDS(on) = 60 mW @ VGS = 15 V
* Typ. RDS(on) = 43 mW @ VGS = 18 V
* Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
* Low Effective Output Capacitance (typ. Coss = 113 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exempt

NTHL060N090SC1 Applications

* UPS
* DC
* DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to
* Source V

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Datasheet Details

Part number: NTHL060N090SC1
Manufacturer: ON Semiconductor ↗
File Size: 758.86 KB
Datasheet: NTHL060N090SC1-ONSemiconductor.pdf
Description: N-Channel MOSFET

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