NTHL080N120SC1

N-Channel MOSFET

ON Semiconductor

NTHL080N120SC1 Features

* 1200 V @ TJ = 175°C

* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A

* High Speed Switching with Low Capacitance

* 100% UIL Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

* Industrial Motor Drive

* UPS

NTHL080N120SC1 General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NTHL080N120SC1 Datasheet (449.24 KB)