NTHL080N120SC1 N-Channel MOSFET

ON Semiconductor

Description

NTHL080N120SC1 MOSFET * Power, N-Channel, Silicon Carbide, TO-247-3L 1200 V, 80 mW .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

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Datasheet Specifications

Part number: NTHL080N120SC1
Manufacturer: ON Semiconductor ↗
File Size: 449.24 KB
Datasheet: NTHL080N120SC1-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% UIL Tested
* These Devices are Pb

Applications

* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger www. onsemi. com VDSS 1200 V RDS(ON) TYP 80 mW D ID MAX 44 A G S GD S TO
* 247 long leads CASE 340CX MARKING DIAGRAM © Semiconductor Components Industries, LLC, 2018 July, 2019
* Rev. 3 $Y

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NTHL080N120SC1 N-Channel MOSFET ON Semiconductor

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