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FDC3601N - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number: FDC3601N
Manufacturer: ON Semiconductor ↗
File Size: 328.55 KB
Datasheet: FDC3601N-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

FDC3601N Product details

Description

These N. Channel 100 V specified MOSFETs are produced using onsemi’s advanced PO.

Features

1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
Low Gate Charge (3.7 nC Typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint 72% (Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

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Dual N-Channel MOSFET ON Semiconductor

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