FDMC8360L - N-Channel MOSFET

ON Semiconductor

FDMC8360L Datasheet Preview — Preview of FDMC8360L PDF

Datasheet Details

Part number	FDMC8360L
Manufacturer	ON Semiconductor ↗
File Size	408.27 KB
Description	N-Channel MOSFET
Datasheet	FDMC8360L-ONSemiconductor.pdf

FDMC8360L Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A.
Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A.
High Performance Technology for Extremely Low RDS(on).
Termination is Lead.
Free.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 19, 2023 |