Datasheet Details
- Part number
- FDMS037N08B
- Manufacturer
- ON Semiconductor ↗
- File Size
- 710.82 KB
- Datasheet
- FDMS037N08B-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMS037N08B Description
MOSFET * N-Channel POWERTRENCH) 75 V, 100 A, 3.7 mW FDMS037N08B .
This N.
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been tailored to minimize the on.
state resistan.
FDMS037N08B Features
* RDS(on) = 3.01 mW (Typ. ) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UIL
FDMS037N08B Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection circuit
* DC Motor Drives and Uninterruptible Power Supplies
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted. )
Symbol
Parameter
Value
Unit
VDSS Drain to Source Voltage
75
V
VGSS
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