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FDS4559 MOSFET

FDS4559 Description

MOSFET * Complementary, POWERTRENCH) 60 V FDS4559 General .
This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on.

FDS4559 Features

* Q1: N
* Channel
* 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V
* Q2: P
* Channel
* 3.5 A,
* 60 V RDS(on) = 105 mΩ @ VGS =
* 10 V RDS(on) = 135 mΩ @ VGS =

FDS4559 Applications

* DC/DC converter
* Power management
* LCD backlight inverter
* This is a Pb
* Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q1 Q2 Unit VDSS Drain
* Source Voltage 60
* 60 V VGSS Gate

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