Datasheet Details
- Part number
- MTP2N40E
- Manufacturer
- ON Semiconductor ↗
- File Size
- 204.50 KB
- Datasheet
- MTP2N40E-ONSemiconductor.pdf
- Description
- Power Field Effect Transistor
MTP2N40E Description
MTP2N40E Designer’s™ Data Sheet TMOS E *FET.™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gate This high .
MTP2N40E Features
* 0 5 10 15 20 25
VGS VDS
GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)
Figure 1a. Capacitance Variation
1000 VGS = 0 V TJ = 25°C
100
10
Ciss
Coss Crss
1 10 100 10
VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS)
Figure 1b. High Voltage Capacitance Variat
MTP2N40E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination
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