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NSVF6003SB6 RF Transistor

NSVF6003SB6 Description

NSVF6003SB6 Advance Information RF Transistor 12 V, 150 mA, fT = 7 GHz, NPN Single This RF transistor is designed for low noise amplifier application.

NSVF6003SB6 Features

* High Gain (fT = 7 GHz typ)
* High Current (IC = 150 mA)
* Miniature and Thin 6 pin Package
* Large Collector Dissipation (800 mW)
* AEC-Q101 qualified and PPAP capable

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