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NTH4L020N090SC1 - SiC MOSFET

NTH4L020N090SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V I.

NTH4L020N090SC1 Features

* Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 196 nC)
* Low Effective Output Capacitance (Coss = 296 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

NTH4L020N090SC1 Applications

* UPS
* DC-DC Converter
* Boost Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 900 V Gate
* to
* Source Voltage VGS +22/
* 8 V Recommended Operation TC < 175°C V

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SiC MOSFET ON Semiconductor
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