2SD2178 Datasheet - Panasonic Semiconductor

2SD2178 Silicon NPN epitaxial planar type Transistor

www.DataSheet4U.com Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification 7.5±0.2 Unit: mm 4.5±0.2 16.0±1.0 Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 50 5 2 3 1.5 150 <.

2SD2178 Features

* 3.8±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package

* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter

2SD2178_PanasonicSemiconductor.pdf