* +0.1 1 Silicon MOS FETs (Small Signal) PD Ta 200 120 2SK3064 ID VDS 60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V 50 Allowable power dissipation PD (mW) 160 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 4.5V 4.0V 40 3.5V 20 3.0V 2.5V 40 120 30 80 20
2SK3064
Panasonic Semiconductor
30.85 KB
N-channel mosfet.
Silicon MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.1±0.1.
📁 Related Datasheet
2SK3060 N-CHANNEL POWER MOS FET (NEC)
2SK3061 N-Channel MOSFET (NEC)
2SK3062 N-Channel MOSFET (NEC)
2SK3065 N-Channel MOSFET (Rohm)
2SK3067 N-Channel MOSFET (Toshiba Semiconductor)
2SK3068 N-Channel MOSFET (Toshiba Semiconductor)
2SK3069 N-Channel MOSFET (Hitachi Semiconductor)
2SK300 N-Channel Silicon MOSFET (Sony Corporation)
2SK3000 Silicon N Channel MOS FET (Hitachi Semiconductor)
2SK3000 Silicon N Channel MOS FET (Renesas Technology)
