2SK3061 Datasheet - NEC

2SK3061, N-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3061 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3061 PACKAGE Iso.
This product is N-Channel MOS Field Effect Transistor designed for high current switching application. Low on-state resistance RDS.

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Datasheet Details

Part number:

2SK3061

Manufacturer:

NEC

File Size:

64.95 KB

Description:

N-Channel MOSFET

Features

* Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss: Ciss = 5200 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Vol

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SK3061 N-Channel MOSFET NEC

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