* Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss: Ciss = 5200 pF TYP.
* Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source V
2SK3062
NEC
69.94 KB
N-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3062 2SK3062-S 2.
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