MIP2E7DMY Datasheet (334.35 KB)
MIP2E7DMY
Panasonic
334.35 KB
Silicon mosfet.
MIP2E7DMY MOS (IPD) Ta = 25°C ± 3°C VD 700 V VC 10 V ID 3.5 A IDP 4.9 A IC 0.1 A Tch 150 °C .
📁 Related Datasheet
MIP2E7D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E1D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E1DMC IPD (Panasonic)
MIP2E1DMS Silicon MOS-type integrated circuit (Panasonic)
MIP2E1DMTSCF Silicon MOSFET (Panasonic)
MIP2E1DMU Silicon MOS-type integrated circuit (Panasonic)
MIP2E2D High-Performance IPD for Battery Chaegers (Matsushita)
MIP2E2DMU IPD (Panasonic)
MIP2E2DMY Silicon MOSFET (Panasonic)
MIP2E3D High-Performance IPD for Battery Chaegers (Matsushita)
