Datasheet Details
- Part number
- 2SK1860
- Manufacturer
- Panasonic Semiconductor
- File Size
- 77.30 KB
- Datasheet
- 2SK1860_PanasonicSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
2SK1860 Description
Silicon Junction FETs (Small Signal) 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacito.
2SK1860 Features
* High mutual conductance gm
* Low noise voltage of NV
1
+0.10 0.40
* 0.05
0.12
* 0.01
+0.02
3
1.5±0.2
2.1±0.1 5.8±0.2
2
* Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gat
2SK1860 Applications
* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff
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