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PE4283 - SPDT High Power UltraCMOS

Description

The PE4283 RF Switch is designed to cover a broad range of applications from DC through 4000 MHz.

This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs.

Features

  • Single-pin or complementary CMOS logic control inputs.
  • 1.5 kV ESD tolerance.
  • Low insertion loss: 0.65 dB at 1000 MHz, 0.70 dB at 2500 MHz.
  • RFC-RF1/RF2 isolation of 33.5 dB at 1000 MHz, 21.5 dB at 2500 MHz.
  • RF1-RF2 isolation of 37.5 dB at 1000 MHz, 22 dB at 2500 MHz.
  • Typical input 1 dB compression point of +32 dBm.
  • Ultra-small SC-70 package Figure 2. Package Type SC-70 RF1 RF2 6-lead SC-70 CMOS Control Driver V1 V2 Table 1.

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Datasheet Details

Part number PE4283
Manufacturer Peregrine Semiconductor
File Size 256.31 KB
Description SPDT High Power UltraCMOS
Datasheet download datasheet PE4283 Datasheet
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www.DataSheet4U.com Product Specification PE4283 Product Description The PE4283 RF Switch is designed to cover a broad range of applications from DC through 4000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. The PE4283 operates using a +3 volt power supply. The PE4283 SPDT High Power RF Switch is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraCMOS™ DC – 4.
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