PDB0854S Datasheet - Potens semiconductor

PDB0854S Dual N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB0854S Features

* 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1 Applications D2

* Networking

* Load Switch

* LED applications S2 Absolute Maximum Ratings Tc

PDB0854S-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDB0854S

Manufacturer:

Potens semiconductor

File Size:

437.64 KB

Description:

Dual n-channel mosfet.

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PDB0854S PDB0854S Dual N-Channel MOSFET Potens semiconductor

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