PDB0854S Dual N-Channel MOSFET

Potens semiconductor

Description

100V Dual N-Channel MOSFETs PDB0854S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Datasheet Specifications

Features

* 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching

PDB0854S Distributors

📁 Related Datasheet

📌 All Tags

Potens semiconductor PDB0854S-like datasheet