Part number:
PDB2309L
Manufacturer:
Potens semiconductor
File Size:
464.77 KB
Description:
P-channel mosfet.
PDB2309L-Potenssemiconductor.pdf
Datasheet Details
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDB2309L Features
* -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Battery Protection
* HaGnd-held Instruments
* Absolute Maximum Ratin
PDB2309L-Potenssemiconductor.pdf
Datasheet Details
PDB2309L
Potens semiconductor
464.77 KB
P-channel mosfet.
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